Semiconductor-type quantum bit device

The present invention addresses the problem of providing a semiconductor-type quantum bit device having reduced variations in characteristics of quantum bit operations when multiple units thereof are integrated. A semiconductor-type quantum bit device 10 is characterized by comprising at least: a support substrate 1 including a first conductivity type semiconductor layer; a fringe electric field formation layer 2 that is formed on the support substrate 1, and that includes a second conductivity type semiconductor layer which has a conductivity type different from that of the first conductivity type semiconductor layer or a metal layer which, together with the support substrate, forms a Schottky barrier wall; an embedded oxide layer 3 that is formed on the fringe electric field formation layer 2; and a quantum dot semiconductor layer 4 that is formed on the embedded oxide layer 3 and in which quantum dots are formed.