Resist composition, resist pattern formation method, compound, and polymer compound

This resist composition comprises a resin component (A1) that exhibits change in solubility in a developing solution due to the action of an acid. The resin component (A1) has a constitution unit (a0) derived from a compound represented by formula (a0-1). W01 represents a polymerizable group-contain...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	ISHII, SHUICHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	This resist composition comprises a resin component (A1) that exhibits change in solubility in a developing solution due to the action of an acid. The resin component (A1) has a constitution unit (a0) derived from a compound represented by formula (a0-1). W01 represents a polymerizable group-containing group; La01 represents an aromatic hydrocarbon group or an alicyclic hydrocarbon group; La02 is a divalent linking group; Ar01 represents an aromatic hydrocarbon group; Ya01 represents a divalent linking group or a single bond; Va01 represents a single bond, an alkylene group, or a fluorinated alkylene group; Ra01 represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group having 1 to 5 carbon atoms; and Mm+ represents an m-valent cation.