Memory device
According to one embodiment, memory device includes a first, second, and third conductive layers in this order, a resistance change layer between the first and the second conductive layers, and a switching layer between the second and the third conductive layers. The switching layer contains: at lea...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | According to one embodiment, memory device includes a first, second, and third conductive layers in this order, a resistance change layer between the first and the second conductive layers, and a switching layer between the second and the third conductive layers. The switching layer contains: at least one first substance from a group consisting of oxide of at least one element from a group consisting of Cr, La, Ce, Y, Sc, Zr, and Hf, nitride of the at least one element, and oxynitride of the at least one element; a second substance being at least one metal from a group consisting of Te, Se, Sb, Bi, Ge, and Sn; and at least one third substance from a group consisting of oxide of the second substance, nitride of the second substance, and oxynitride of the second substance. |
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