Etching method and etching device of silicon oxide

To provide a dry etching method of a silicon oxide, a gaseous hydrogen fluoride and a gaseous organic amine compound, and/or a hydrogen fluoride salt of a gaseous organic amine compound are reacted with a silicon oxide without a plasma state.

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Bibliographische Detailangaben
Hauptverfasser:	SUZUKI, SHOI, YAO, AKIFUMI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NATURAL RESINS NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To provide a dry etching method of a silicon oxide, a gaseous hydrogen fluoride and a gaseous organic amine compound, and/or a hydrogen fluoride salt of a gaseous organic amine compound are reacted with a silicon oxide without a plasma state.