Plasma treatment method and plasma treatment system

Provided is a plasma treatment method implemented in a plasma treatment device having a chamber. This method comprises: (a) a step for preparing, on a substrate support part in a chamber, a substrate having a film to be etched and a metal-containing film which is provided on the film to be etched an...

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Bibliographische Detailangaben
Hauptverfasser:	SHIMIZU, YUSUKE, YOSHIKOSHI, DAISUKE, TAHARA, SHIGERU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Provided is a plasma treatment method implemented in a plasma treatment device having a chamber. This method comprises: (a) a step for preparing, on a substrate support part in a chamber, a substrate having a film to be etched and a metal-containing film which is provided on the film to be etched and which has an exposed first region and an unexposed second region; (b) a step for reforming the metal-containing film by using a first plasma generated from a first treatment gas containing either a fluorine-containing gas or an oxygen-containing gas; and (c) a step for selectively removing the first region with respect to the second region in the reformed metal-containing film by using a second plasma generated from a second treatment gas.