Substrate processing method and substrate processing apparatus
A substrate processing method includes: immersing S1 a substrate W in a processing liquid L that is alkaline; and etching S2 with the processing liquid L a polysilicon layer Wc filled in a recess Wb with a columnar shape extending substantially perpendicular to a main surface Wa of the substrate W....
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A substrate processing method includes: immersing S1 a substrate W in a processing liquid L that is alkaline; and etching S2 with the processing liquid L a polysilicon layer Wc filled in a recess Wb with a columnar shape extending substantially perpendicular to a main surface Wa of the substrate W. In the etching S2, bubbles generated in the recess Wb is removed. |
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