Handling method of wafer back-end process and wafer-level semiconductor structure

A handling method of a wafer back-end process includes the following steps. A wafer including a front side and a back side is provided, where a plurality of semiconductor elements is formed between the front side and the back side of the wafer, an interconnection layer is formed on these semiconductor elements, and the wafer is divided into a plurality of die units by a plurality of scribe lines. The wafer is thinned from the back side of the wafer by a grinding process. A portion of the interconnect layer and a portion of the wafer are removed along the scribe line to form a groove on the front side of the wafer. A conductive layer is formed on the back side of the wafer after thinning the wafer and forming the groove, where the conductive layer is vertically separated from the bottom surface of the groove.