High modulus carbon doped silicon oxide film for mold stack scaling solutions in advanced memory applications

Provided are reduced temperature plasma enhanced chemical vapor deposition processes for producing high modulus oxide thin films on a substrate. The substrate temperature for deposition of the oxide thin film is less than about 700 DEG C.

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Bibliographische Detailangaben
Hauptverfasser:	SUBRAMONIUM, PRAMOD, HAMMA, SOUMANA, BANERJI, ANANDA K, SAMANTARAY, MALAY MILAN, HAYNES, KATHERINE ELIZABETH, REDDY, KAPU SIRISH
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided are reduced temperature plasma enhanced chemical vapor deposition processes for producing high modulus oxide thin films on a substrate. The substrate temperature for deposition of the oxide thin film is less than about 700 DEG C.