T-gate transistor with mini field plate and angled gate stem
A transistor and method of fabricating the same comprising a channel layer; an epitaxial barrier layer on the channel layer; an epitaxial cap layer on the epitaxial barrier layer; a dielectric layer on the epitaxial cap layer having an opening through to the epitaxial barrier layer; a gate having an...
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| Hauptverfasser: | , , , |
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | A transistor and method of fabricating the same comprising a channel layer; an epitaxial barrier layer on the channel layer; an epitaxial cap layer on the epitaxial barrier layer; a dielectric layer on the epitaxial cap layer having an opening through to the epitaxial barrier layer; a gate having angled sidewalls in the opening of the dielectric layer; a mini field plate having angled sidewalls on the gate; and a gate top on the mini field plate, wherein the gate, the mini field plate, and the gate top form a "T" shape. |
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