Wafer optical inspection method and device

A wafer optical inspection method and device for detecting whether a wafer is defective are disclosed, the wafer comprises n dies. The method has the following steps: selecting two adjacent dies from the n dies; obtaining optical images of the selected two adjacent dies; comparing whether there are...

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Bibliographische Detailangaben
Hauptverfasser:	HSU, HAO, CHIU, WEI-YAO, LIN, YINGIH
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMAGE DATA PROCESSING OR GENERATION, IN GENERAL INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A wafer optical inspection method and device for detecting whether a wafer is defective are disclosed, the wafer comprises n dies. The method has the following steps: selecting two adjacent dies from the n dies; obtaining optical images of the selected two adjacent dies; comparing whether there are inconsistencies between the two optical images of two adjacent grains; if yes, determining that the wafer is defective.