Lateral gap fill

Lateral gap fill

Inhibition of dielectric film growth is described. The inhibition may be used during atomic layer deposition (ALD) processes of dielectric material in gaps to facilitate bottom-up (or inside-out) gap fill. One or more inhibition operations are performed during gap fill. The inhibition operation modi...

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Bibliographische Detailangaben
Hauptverfasser: GRUMBLES, MARY WADDINGTON, PETRAGLIA, JENNIFER LEIGH, MESSINA, DANIEL CHRISTOPHER, AGNEW, DOUGLAS WALTER
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:Inhibition of dielectric film growth is described. The inhibition may be used during atomic layer deposition (ALD) processes of dielectric material in gaps to facilitate bottom-up (or inside-out) gap fill. One or more inhibition operations are performed during gap fill. The inhibition operation modifies the surface of the gap in a manner that inhibits growth in subsequent ALD cycles.