Substrate comprising a base and an integrated getter film for manufacturing microelectronic devices

A substrate comprising a base and an integrated coated getter film for manufacturing microelectronic, microoptoelectronic or micromechanical devices, wherein the composition of said getter film comprises Zr in an amount comprises between 65 %at and 80 %at, V in an amount comprised between 15 %at and 25 %at, a third element selected between Al and Fe in an amount comprised between 2 %at and 15 %at, and the getter film structure is characterized by surface roughness values comprised between 2 and 20 nm.