Semiconductor device
The present disclosure provides a semiconductor device including an epitaxial structure, a first metal structure and a second metal structure. The epitaxial structure includes a first island portion and a second island portion which are separated from each other. The first island portion has a first...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The present disclosure provides a semiconductor device including an epitaxial structure, a first metal structure and a second metal structure. The epitaxial structure includes a first island portion and a second island portion which are separated from each other. The first island portion has a first upper surface. The second island portion has a second upper surface and a first sidewall. The first metal structure has a first part located under the first island portion and a second part located under the second island portion. The second part physically connects the first part. The second metal structure covers and directly contacts the second upper surface, the first sidewall and the first metal structure. |
|---|