Pixel sensor and methods of forming deep trench isolation structure

Pixel sensor and methods of forming deep trench isolation structure

Doping a liner of a trench isolation structure with fluorine reduces dark current from a photodiode. For example, the fluorine may be added to a passivation layer surrounding a backside deep trench isolation structure. As a result, sensitivity of the photodiode is increased. Additionally, breakdown...

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Bibliographische Detailangaben
Hauptverfasser: CHEN, SHENGAU, TSAI, CHENG-YUAN, YU, CHUNG-YI, CHENG, CHUNG-LIANG, LI, SHENGAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Doping a liner of a trench isolation structure with fluorine reduces dark current from a photodiode. For example, the fluorine may be added to a passivation layer surrounding a backside deep trench isolation structure. As a result, sensitivity of the photodiode is increased. Additionally, breakdown voltage of the photodiode is increased, and a quantity of white pixels in a pixel array including the photodiode are reduced.