Method for manufacturing semiconductor device, hybrid bonding insulating film-forming material, and semiconductor device

A method for manufacturing a semiconductor device includes: preparing a first semiconductor substrate having a first semiconductor substrate body, and having, on one surface of the first semiconductor substrate body, a first electrode and a first organic insulating film having a surface roughness Ra of 2.0 nm or less; preparing a second semiconductor substrate having a second semiconductor substrate body, and having, on one surface of the second semiconductor substrate body, a second electrode and a second organic insulating film having a surface roughness Ra of 2.0 nm or less; affixing together the first organic insulating film and the second organic insulating film at 70 DEG C or less; and bonding the first electrode and the second electrode.