Optoelectronic semiconductor device

An optoelectronic semiconductor device is provided, including: a stack of epitaxial layer including a first semiconductor structure, an active structure on the first semiconductor structure, and a second semiconductor structure on the active structure, wherein the stack of epitaxial layer has a firs...

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Bibliographische Detailangaben
Hauptverfasser:	LIN, YA-WEN, CHEN, SHIH-I, YANG, TZU-LING, HUANG, CHING-EN, KU, HAO-MING, LIN, CHUANG-SHENG, HO, YIIA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An optoelectronic semiconductor device is provided, including: a stack of epitaxial layer including a first semiconductor structure, an active structure on the first semiconductor structure, and a second semiconductor structure on the active structure, wherein the stack of epitaxial layer has a first portion and a second portion, and the second semiconductor structure of the first portion is separated from the second semiconductor structure of the second portion; a trench between the first portion and the second portion; a recess in the first portion; a first contact structure in the recess; and a first electrode covering the first contact structure and the trench. When the optoelectronic semiconductor device is operated, the first portion does not emit light.