Deposition apparatus

A deposition apparatus includes a chamber, a susceptor, several injection pipes, and a plasma device. The susceptor is disposed within the chamber and is configured to carry a substrate. The injection pipes are respectively disposed in and pass through an upper portion of the chamber, and are locate...

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Bibliographische Detailangaben
Hauptverfasser:	CHEN, ZHAONG, CHANG, YUI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A deposition apparatus includes a chamber, a susceptor, several injection pipes, and a plasma device. The susceptor is disposed within the chamber and is configured to carry a substrate. The injection pipes are respectively disposed in and pass through an upper portion of the chamber, and are located over the susceptor. A nozzle of each of the injection pipes is tangent to an inner side surface of the chamber, so that several process gases ejected through the nozzles of the injection pipes respectively rotate along the inner side surface of the chamber. The process gases at least include a precursor gas. The plasma device is disposed in and passes through a top of the chamber, and is configured to generate plasma within the chamber to activate the precursor gas to form activators.