Insulating film forming material, method of manufacturing semiconductor device and semiconductor device

An insulating film material for forming an insulating film by hybrid bonding includes (A) a polyimide precursor including at least one resin selected from the group consisting of a polyamic acid, a polyamic acid ester, a polyamic acid salt and a polyamic acid amide, (B) a polymerizable monomer, and...

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Bibliographische Detailangaben
Hauptverfasser:	KOBAYASHI, KAORI, YONEDA, SATOSHI, MATSUKAWA, DAISAKU, ADACHI, KENYA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	An insulating film material for forming an insulating film by hybrid bonding includes (A) a polyimide precursor including at least one resin selected from the group consisting of a polyamic acid, a polyamic acid ester, a polyamic acid salt and a polyamic acid amide, (B) a polymerizable monomer, and a content of a compound containing an alkylene oxide chain and a (meth)acrylic group, classified as the (B) polymerizable monomer is less than 20 parts by mass with respect to 100 parts by mass of the (A) polyimide precursor.