Double-channel semiconductor device and method for fabricating the same

A double-channel semiconductor device is presented herein. The double-channel semiconductor device is a cascode solution integrating two semiconductor channels: a HEMT channel and a thin film transistor (TFT) channel. The HEMT channel can be an AlGaN/GaN HEMT channel and the TFT channel can be a pol...

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Bibliographische Detailangaben
Hauptverfasser:	RAMDANI, JAMAL, FLOYD, BRIAN HAROLD, KUDYMOV, ALEXEY
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A double-channel semiconductor device is presented herein. The double-channel semiconductor device is a cascode solution integrating two semiconductor channels: a HEMT channel and a thin film transistor (TFT) channel. The HEMT channel can be an AlGaN/GaN HEMT channel and the TFT channel can be a polycrystalline silicon (polysilicon) TFT channel. The polysilicon TFT may advantageously operate in enhancement mode to realize an enhancement-mode cascode device.