SiC semiconductor device and method of manufacturing SiC semiconductor device

The purpose of the present invention is to provide an SiC semiconductor device having properties allowing for the greatest possible increase in the strength of the SiC semiconductor device when an SiC semiconductor device (1) is cut out from an SiC semiconductor wafer (11) by a scribing and breaking...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TANAKA, MAKI, KITAICHI, MITSURU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!