SiC semiconductor device and method of manufacturing SiC semiconductor device

The purpose of the present invention is to provide an SiC semiconductor device having properties allowing for the greatest possible increase in the strength of the SiC semiconductor device when an SiC semiconductor device (1) is cut out from an SiC semiconductor wafer (11) by a scribing and breaking (SnB) technique. Also provided is a method of manufacturing this SiC semiconductor device. This SiC semiconductor device is obtained by using a scribing tool to form a scribe line (L) on the SiC semiconductor wafer (11), and thereafter applying external force along the scribe line (L) to divide into parts, wherein a longitudinal stripe (TL) continuous with a C surface is formed in a side wall surface of the SiC semiconductor device (1), from a predetermined depth excluding a plastic deformation region of an Si surface and a vertical crack region formed directly therebelow, the longitudinal stripe (TL) satisfying the condition of being "rectilinear", or the condition "where the C surface is a lower surface, the ext