High energy atomic layer etch of a carbon containing layer

High energy atomic layer etch of a carbon containing layer

A method comprises a plurality of cycles, wherein each cycle, comprises exposing the carbon containing etch layer to oxygen radicals to modify part of the carbon containing etch layer. The carbon containing etch layer is exposed to bombardment ions with an energy greater than 100 eV for less than 0....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LEE, YOUNG AH, LI, BAICHANG, FAN, YIWEN, PAN, YANG, VAN CLEEMPUT, PATRICK AUGUST, THOMAS, CLINT EDWARD, YANG, WENBING, BENNET, ALEXANDER DECLAN, TAN, SAMANTHA SIAMHWA, PATRICK, ROGER, LEE, YOUNGHEE, WITKOWICKI, DEREK, BALAN, ARUNIMA DEYA
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method comprises a plurality of cycles, wherein each cycle, comprises exposing the carbon containing etch layer to oxygen radicals to modify part of the carbon containing etch layer. The carbon containing etch layer is exposed to bombardment ions with an energy greater than 100 eV for less than 0.5 seconds, wherein the bombardment ions remove the modified part of the carbon containing etch layer to form etched features.