SiC single crystal substrate

A SiC single crystal substrate of an embodiment is a SiC single crystal substrate wherein the main plane of the SiC single crystal substrate has an off angle of 0 DEG to 6 DEG to the (0001) plane in the /11 -20/ direction and an off angle of 0 DEG to 0.5 DEG to the (0001) plane in the /1 -100/ direc...

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1. Verfasser:	SHONAI, TOMOHIRO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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creator	SHONAI, TOMOHIRO
description	A SiC single crystal substrate of an embodiment is a SiC single crystal substrate wherein the main plane of the SiC single crystal substrate has an off angle of 0 DEG to 6 DEG to the (0001) plane in the /11 -20/ direction and an off angle of 0 DEG to 0.5 DEG to the (0001) plane in the /1 -100/ direction, and includes non-MP defects wherein when the Si surface is etched in molten KOH at 500 DEG C for 15 minutes, the non-MP defects that appear by etching are hexagonal and have no core, the area of the observed etch pit of the non-MP defect is more than 10% larger than that of the observed etch pit of the TSD and is less than 110% of that of the observed etch pit of the micropipe (MP), and a transmission X-ray topography image of the non-MP defect is distinguishable from the transmission X-ray topography image of the micropipe (MP), wherein etch pits, which are identified as the non-MP defects, appear in the range of 0. 1/cm2 to 50/cm2.
format	Patent
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language	chi ; eng
recordid	cdi_epo_espacenet_TW202400861A
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subjects	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title	SiC single crystal substrate
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