Non-volatile memory cell and non-volatile semiconductor storage device

Provided are a non-volatile memory cell and a non-volatile semiconductor storage device that achieve integration and size reduction. This non-volatile semiconductor storage device has a memory cell C in which a memory transistor MT, a drain-side selection transistor DT, and a source-side selection t...

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Hauptverfasser:	TANIGUCHI, YASUHIRO, OKUYAMA, KOSUKE, SHIROTA, RIICHIRO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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creator	TANIGUCHI, YASUHIRO OKUYAMA, KOSUKE SHIROTA, RIICHIRO
description	Provided are a non-volatile memory cell and a non-volatile semiconductor storage device that achieve integration and size reduction. This non-volatile semiconductor storage device has a memory cell C in which a memory transistor MT, a drain-side selection transistor DT, and a source-side selection transistor ST are connected in series. The memory cell C has a three-dimensional structure, which makes it possible to integrate and reduce the size of the memory cell C without the limitations of two-dimensional scaling.
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subjects	INFORMATION STORAGE PHYSICS STATIC STORES
title	Non-volatile memory cell and non-volatile semiconductor storage device
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