Non-volatile memory cell and non-volatile semiconductor storage device

Provided are a non-volatile memory cell and a non-volatile semiconductor storage device that achieve integration and size reduction. This non-volatile semiconductor storage device has a memory cell C in which a memory transistor MT, a drain-side selection transistor DT, and a source-side selection transistor ST are connected in series. The memory cell C has a three-dimensional structure, which makes it possible to integrate and reduce the size of the memory cell C without the limitations of two-dimensional scaling.