Semiconductor device and method of manufacturing the same

A semiconductor device according to an embodiment includes a first conductor, a first oxide semiconductor, a first insulator, a second conductor, a third conductor, and a fourth conductor. The first oxide semiconductor contacts, at one end, the first conductor, and extends in a first direction intersecting a surface of the first conductor. The first insulator surrounds a side surface of the first oxide semiconductor. The second conductor and the first oxide semiconductor interpose the first insulator therebetween. The third conductor contacts another end of the first oxide semiconductor. The fourth conductor extends in a second direction intersecting the first direction, and contacts a second conductor on a side opposite to the first insulator. The second conductor is of a material with a higher work function than a material of the fourth conductor.