Integrated circuit devices including stacked elements and methods of forming the same
An integrated circuit device and a method of forming the same are provided. The integrated circuit device may include a transistor, a passive device, a substrate extending between the transistor and the passive device and a power rail. The passive device may be spaced apart from the substrate. Each...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | An integrated circuit device and a method of forming the same are provided. The integrated circuit device may include a transistor, a passive device, a substrate extending between the transistor and the passive device and a power rail. The passive device may be spaced apart from the substrate. Each of the passive device and the power rail may have a first surface facing the substrate, and the first surface of the passive device is closer than the first surface of the power rail to the substrate. |
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