Integrated circuit devices including stacked elements and methods of forming the same

An integrated circuit device and a method of forming the same are provided. The integrated circuit device may include a transistor, a passive device, a substrate extending between the transistor and the passive device and a power rail. The passive device may be spaced apart from the substrate. Each...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: JUNG, MYUNG-HOON, YUN, SEUNGAN, HONG, BYOUNG-HAK, LEE, JANG-GEUN, YIM, JEONG-HYUK, SEO, KANGILL, LEE, SEUNG-YOUNG, SON, GIL-HWAN, HWANG, INAN, PARK, SAE-HAN, HAM, BU-HYUN
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An integrated circuit device and a method of forming the same are provided. The integrated circuit device may include a transistor, a passive device, a substrate extending between the transistor and the passive device and a power rail. The passive device may be spaced apart from the substrate. Each of the passive device and the power rail may have a first surface facing the substrate, and the first surface of the passive device is closer than the first surface of the power rail to the substrate.