Plasma processing method

The present invention provides a plasma processing method with which the number of abnormalities occurring after maintenance of a plasma processing device is reduced and a state in which work can be started on products is realized in a short time. A plasma processing method for carrying out plasma p...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MORIYA, YUKI, HIROTA, KOSA, SUMIYA, MASAHIRO, PANDEY, ANIL, EZAKI, RYU
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The present invention provides a plasma processing method with which the number of abnormalities occurring after maintenance of a plasma processing device is reduced and a state in which work can be started on products is realized in a short time. A plasma processing method for carrying out plasma processing of a sample, the method having: a sweeping step for sweeping abnormalities after maintenance of a processing chamber in which the sample is subjected to plasma processing; a deposition step for depositing a deposit film within the processing chamber after the sweeping step; a first removal step for removing the deposit film after the deposition step; a second removal step for removing fluorine within the processing chamber after the first removal step; and a plasma processing step for carrying out plasma processing on the sample, which is placed on a sample platform. Before the plasma processing step, each of the sweeping step, the deposition step, the first removal step, and the second removal step is re