Treatments to enhance material structures

A method of forming a semiconductor structure includes pre-cleaning a surface of a substrate, forming an interfacial layer on the pre-cleaned surface of the substrate, depositing a high-K dielectric layer on the interfacial layer, performing a plasma nitridation process to insert nitrogen atoms in t...

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Bibliographische Detailangaben
Hauptverfasser:	SWENBERG, JOHANES, HUNG, STEVEN C.H, BEVAN, MALCOLM
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of forming a semiconductor structure includes pre-cleaning a surface of a substrate, forming an interfacial layer on the pre-cleaned surface of the substrate, depositing a high-K dielectric layer on the interfacial layer, performing a plasma nitridation process to insert nitrogen atoms in the deposited high-K dielectric layer, and performing a post-nitridation anneal process to passivate chemical bonds in the plasma nitridated high-K dielectric layer.