Plasma processing apparatus

There is a plasma processing apparatus comprising: a plasma processing chamber; a substrate support; a baffle structure to surround the substrate support, the baffle structure including an upper baffle plate and a lower baffle plate, the upper baffle plate having a plurality of first openings, each...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SATO, TETSUJI, MATSUURA, SHIN, ABE, RYOYA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	There is a plasma processing apparatus comprising: a plasma processing chamber; a substrate support; a baffle structure to surround the substrate support, the baffle structure including an upper baffle plate and a lower baffle plate, the upper baffle plate having a plurality of first openings, each of the plurality of first openings having a first width, the lower baffle plate having a plurality of second openings, each of the plurality of second openings having an upper opening portion and a lower opening portion; and a liner structure to surround a plasma processing space disposed above the substrate support, the liner structure including an inner cylindrical liner and an outer cylindrical liner, the inner cylindrical liner having a plurality of third openings, each of the plurality of third openings having a fourth width, the outer cylindrical liner having a plurality of fourth openings, each of the plurality of fourth openings having an inner opening portion and an outer opening portion.