Process for the manufacture of a multilayer structure of semiconductor-on-insulator type

The invention relates to a process for the manufacture of a structure of semiconductor-on-insulator type (1) comprising: - the assembling of a support substrate (2) exhibiting an electrical resistivity of greater than or equal to 500 [Omega].cm and containing interstitial nitrogen (6) and interstitial oxygen (7), the initial concentration of interstitial oxygen (7) in the support substrate (2) being between 15 and 25 old ppma, and of a donor substrate for a semiconductor layer (4), an electrically insulating layer (3) being at the interface between the support substrate (2) and the donor substrate, - the transfer of said semiconductor layer (4) onto the support substrate, the process additionally comprising a nucleation stage suitable for precipitating a part of the oxygen (7) and of the nitrogen (6), so as to form seeds (9) of precipitates (8), and a stabilization stage suitable for causing said seeds to grow to a size of between 10 and 50 nm.