Protection tape and manufacturing method of semiconductor device

A protection tape includes a first substrate layer, an adhesive layer and a shrinkage layer. The shrinkage layer is located between the first substrate layer and the adhesive layer. The thermal expansion coefficient of the shrinkage layer at 180 DEG C is larger than or equal to 100 [mu]m/m DEG C and...

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Bibliographische Detailangaben
Hauptverfasser:	LIN, CHIN-KAI, HUANG, CHI-HUA, CHEN, CHUN-FA, XIE, SHI-ROU, CHEN, XUAN-YOU, LEE, CHEN-JU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL PAINTS POLISHES SEMICONDUCTOR DEVICES USE OF MATERIALS AS ADHESIVES
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Beschreibung
Zusammenfassung:	A protection tape includes a first substrate layer, an adhesive layer and a shrinkage layer. The shrinkage layer is located between the first substrate layer and the adhesive layer. The thermal expansion coefficient of the shrinkage layer at 180 DEG C is larger than or equal to 100 [mu]m/m DEG C and less than 400 [mu]m/m DEG C, and the hardness of the shrinkage layer is greater than the Shore 30A at 23 DEG C.