Ceria-based slurry compositions for selective and nonselective CMP of silicon oxide, silicon nitride, and polysilicon

The invention provides a chemical-mechanical polishing composition comprising: (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; and (d) water, wherein the polishing composition has a pH of about 6 to about 9. The invention also provides a method of chemically-mechanically polishin...

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Bibliographische Detailangaben
Hauptverfasser:	JIN, SHENG-YU, HUANG, HE-LIN, CHANG, JU-YEON, REISS, BRIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	The invention provides a chemical-mechanical polishing composition comprising: (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; and (d) water, wherein the polishing composition has a pH of about 6 to about 9. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride, and polysilicon, using the inventive polishing composition.