Method for forming capacitor electrode

A method for forming a capacitor electrode in accordance with an exemplary embodiment includes a step of forming a TiN thin-film by injecting a source containing titanium (Ti) and a reactant containing nitrogen and a step of forming SiN thin-film by injecting a source containing silicon (Si) and a r...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, DA-EUN, OH, JIN-PYO, JUNG, HYO-SUB, SON, CHEONG, LEE, JE-RYUN, LEE, JONG-SOO, JEON, JEONG-SOO, KIM, YEON-RAE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for forming a capacitor electrode in accordance with an exemplary embodiment includes a step of forming a TiN thin-film by injecting a source containing titanium (Ti) and a reactant containing nitrogen and a step of forming SiN thin-film by injecting a source containing silicon (Si) and a reactant containing nitrogen, and at least one of the source containing titanium (Ti) and the source containing silicon (Si) is injected a plurality of times. Thus, in accordance with exemplary embodiments, when at least one of a lower electrode and an upper electrode of a capacitor is formed by laminating the TiN thin-film and the SiN thin-film, a deposition speed of the SiN thin-film may be improved, and step coverage of the thin film may be improved.