Carbon mask deposition

Carbon mask deposition

Examples are disclosed that relate to depositing a carbon mask to thicken a partially etched mask. One example provides a method comprising forming a mask layer on a substrate, and etching the substrate to partially form one or more etched features, the etching of the substrate also causing etching...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SCHROEDER, TODD, ANJOS RIGSBY, DANIELA, REDDY, KAPU SIRISH
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Examples are disclosed that relate to depositing a carbon mask to thicken a partially etched mask. One example provides a method comprising forming a mask layer on a substrate, and etching the substrate to partially form one or more etched features, the etching of the substrate also causing etching of the mask layer. The method further comprises, after etching a portion of the one or more etched features but before completing etching of the one or more etched features, depositing, by plasma-enhanced chemical vapor deposition (PECVD), a carbon mask over the mask layer.