Substrate processing method, substrate processing apparatus, and program
To provide a technique capable of selectively forming a film onto a desired front surface with high accuracy. A substrate processing method includes: a step of providing a substrate in which a conductive film and an insulation film are exposed to a front surface; a step of selectively forming an oxi...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KAWASAKI, FUMIO HIROSE, YOSHIRO NAKATANI, KIMIHIKO NAGATA, KEISUKE OTSUKA, YASUNORI HASHIMOTO, YOSHITOMO |
| description | To provide a technique capable of selectively forming a film onto a desired front surface with high accuracy. A substrate processing method includes: a step of providing a substrate in which a conductive film and an insulation film are exposed to a front surface; a step of selectively forming an oxidant onto the front surface of the insulation film from the conductive film and the insulation film by supplying a material without halogen, the oxidant, and a catalyst to the substrate under an atmosphere of a non-plasma. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202343568A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202343568A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202343568A3</originalsourceid><addsrcrecordid>eNrjZPAILk0qLilKLElVKCjKT04tLs7MS1fITS3JyE_RUSjGJplYUJAIFCst1lFIzEsByaQXJebyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL4kHAjAyNjE2NTMwtHY2LUAAAJwDUu</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Substrate processing method, substrate processing apparatus, and program</title><source>esp@cenet</source><creator>KAWASAKI, FUMIO ; HIROSE, YOSHIRO ; NAKATANI, KIMIHIKO ; NAGATA, KEISUKE ; OTSUKA, YASUNORI ; HASHIMOTO, YOSHITOMO</creator><creatorcontrib>KAWASAKI, FUMIO ; HIROSE, YOSHIRO ; NAKATANI, KIMIHIKO ; NAGATA, KEISUKE ; OTSUKA, YASUNORI ; HASHIMOTO, YOSHITOMO</creatorcontrib><description>To provide a technique capable of selectively forming a film onto a desired front surface with high accuracy. A substrate processing method includes: a step of providing a substrate in which a conductive film and an insulation film are exposed to a front surface; a step of selectively forming an oxidant onto the front surface of the insulation film from the conductive film and the insulation film by supplying a material without halogen, the oxidant, and a catalyst to the substrate under an atmosphere of a non-plasma.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231101&DB=EPODOC&CC=TW&NR=202343568A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231101&DB=EPODOC&CC=TW&NR=202343568A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWASAKI, FUMIO</creatorcontrib><creatorcontrib>HIROSE, YOSHIRO</creatorcontrib><creatorcontrib>NAKATANI, KIMIHIKO</creatorcontrib><creatorcontrib>NAGATA, KEISUKE</creatorcontrib><creatorcontrib>OTSUKA, YASUNORI</creatorcontrib><creatorcontrib>HASHIMOTO, YOSHITOMO</creatorcontrib><title>Substrate processing method, substrate processing apparatus, and program</title><description>To provide a technique capable of selectively forming a film onto a desired front surface with high accuracy. A substrate processing method includes: a step of providing a substrate in which a conductive film and an insulation film are exposed to a front surface; a step of selectively forming an oxidant onto the front surface of the insulation film from the conductive film and the insulation film by supplying a material without halogen, the oxidant, and a catalyst to the substrate under an atmosphere of a non-plasma.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAILk0qLilKLElVKCjKT04tLs7MS1fITS3JyE_RUSjGJplYUJAIFCst1lFIzEsByaQXJebyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL4kHAjAyNjE2NTMwtHY2LUAAAJwDUu</recordid><startdate>20231101</startdate><enddate>20231101</enddate><creator>KAWASAKI, FUMIO</creator><creator>HIROSE, YOSHIRO</creator><creator>NAKATANI, KIMIHIKO</creator><creator>NAGATA, KEISUKE</creator><creator>OTSUKA, YASUNORI</creator><creator>HASHIMOTO, YOSHITOMO</creator><scope>EVB</scope></search><sort><creationdate>20231101</creationdate><title>Substrate processing method, substrate processing apparatus, and program</title><author>KAWASAKI, FUMIO ; HIROSE, YOSHIRO ; NAKATANI, KIMIHIKO ; NAGATA, KEISUKE ; OTSUKA, YASUNORI ; HASHIMOTO, YOSHITOMO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202343568A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KAWASAKI, FUMIO</creatorcontrib><creatorcontrib>HIROSE, YOSHIRO</creatorcontrib><creatorcontrib>NAKATANI, KIMIHIKO</creatorcontrib><creatorcontrib>NAGATA, KEISUKE</creatorcontrib><creatorcontrib>OTSUKA, YASUNORI</creatorcontrib><creatorcontrib>HASHIMOTO, YOSHITOMO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAWASAKI, FUMIO</au><au>HIROSE, YOSHIRO</au><au>NAKATANI, KIMIHIKO</au><au>NAGATA, KEISUKE</au><au>OTSUKA, YASUNORI</au><au>HASHIMOTO, YOSHITOMO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Substrate processing method, substrate processing apparatus, and program</title><date>2023-11-01</date><risdate>2023</risdate><abstract>To provide a technique capable of selectively forming a film onto a desired front surface with high accuracy. A substrate processing method includes: a step of providing a substrate in which a conductive film and an insulation film are exposed to a front surface; a step of selectively forming an oxidant onto the front surface of the insulation film from the conductive film and the insulation film by supplying a material without halogen, the oxidant, and a catalyst to the substrate under an atmosphere of a non-plasma.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_TW202343568A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Substrate processing method, substrate processing apparatus, and program |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T23%3A21%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KAWASAKI,%20FUMIO&rft.date=2023-11-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202343568A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |