Substrate processing method, substrate processing apparatus, and program

To provide a technique capable of selectively forming a film onto a desired front surface with high accuracy. A substrate processing method includes: a step of providing a substrate in which a conductive film and an insulation film are exposed to a front surface; a step of selectively forming an oxi...

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Bibliographische Detailangaben
Hauptverfasser:	KAWASAKI, FUMIO, HIROSE, YOSHIRO, NAKATANI, KIMIHIKO, NAGATA, KEISUKE, OTSUKA, YASUNORI, HASHIMOTO, YOSHITOMO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a technique capable of selectively forming a film onto a desired front surface with high accuracy. A substrate processing method includes: a step of providing a substrate in which a conductive film and an insulation film are exposed to a front surface; a step of selectively forming an oxidant onto the front surface of the insulation film from the conductive film and the insulation film by supplying a material without halogen, the oxidant, and a catalyst to the substrate under an atmosphere of a non-plasma.