Ion source, ion implanter and method of operating a metal ion source

An ion source, an ion implanter and a method of operating a metal ion source are provided. The ion source may include an ion chamber to generate an ion beam comprising a metal ion species; and a charge source, coupled to deliver a metal vapor to the ion chamber, the charge source including a charge...

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Hauptverfasser: WRIGHT, GRAHAM, PRAGER, RYAN C
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:An ion source, an ion implanter and a method of operating a metal ion source are provided. The ion source may include an ion chamber to generate an ion beam comprising a metal ion species; and a charge source, coupled to deliver a metal vapor to the ion chamber, the charge source including a charge mixture. The charge mixture may include a first portion, comprising an elemental metal; and a second portion, comprising a heterogeneous metal fluoride compound.