Semiconductor device and power amplifier

Semiconductor device and power amplifier

A semiconductor device includes: a substrate; a channel layer disposed on the substrate; and a barrier layer disposed on the channel layer. The semiconductor device further includes: a gate electrode disposed on the barrier layer; a source electrode and a drain electrode disposed on the barrier laye...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LIN, YANNG, WANG, WEIOU, WU, JIUN-DE, LIN, CHENG-KUO, LIN, CHE-KAI, HUANG, CHIEHIH
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor device includes: a substrate; a channel layer disposed on the substrate; and a barrier layer disposed on the channel layer. The semiconductor device further includes: a gate electrode disposed on the barrier layer; a source electrode and a drain electrode disposed on the barrier layer and respectively at opposite sides of the gate electrode; and a spike region formed below at least one of the source electrode and the drain electrode. The spike region includes titanium nitride.