Memory device

In general, according to one embodiment, a memory device includes: a first and a second chip that are in contact with each other on a first surface divided into a first region, a second region surrounding the first region, and a third region surrounding the second region. The first chip includes: a...

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Hauptverfasser:	ARAI, SHINYA, KAWANISHI, AYAKO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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creator	ARAI, SHINYA KAWANISHI, AYAKO
description	In general, according to one embodiment, a memory device includes: a first and a second chip that are in contact with each other on a first surface divided into a first region, a second region surrounding the first region, and a third region surrounding the second region. The first chip includes: a substrate including a first diffusion region of a first conductivity type and a second diffusion region of a second conductivity type; a first electrode unit including a continuous conductor surrounding the first region; and a second electrode unit surrounding the first region while being spaced from the first electrode unit. The second chip includes: a first interconnect layer; a third electrode unit including a continuous conductor surrounding the first region and being in contact with the first electrode unit; a fourth electrode unit surrounding the first region while being spaced from the third electrode unit and being in contact with the second electrode unit; a first wall unit being in contact with the first
format	Patent
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subjects	INFORMATION STORAGE PHYSICS STATIC STORES
title	Memory device
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