Semiconductor structures and methods for forming the same

Methods and semiconductor structures are provided. A method according to the present disclosure includes receiving a workpiece that includes a first gate structure disposed over a first active region, a second gate structure disposed over a second active region, a first gate spacer extending along a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LU, WEI-YUAN, TSENG, SZU-WEI, LEE, WEI-YANG, KAO, TZU-WEI, LIN, CHIA-PIN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:Methods and semiconductor structures are provided. A method according to the present disclosure includes receiving a workpiece that includes a first gate structure disposed over a first active region, a second gate structure disposed over a second active region, a first gate spacer extending along a sidewall of the first gate structure and disposed at least partially over a top surface of the first active region, a second gate spacer extending along a sidewall of the second gate structure and disposed at least partially over a top surface of the second active region, and a source/drain feature. The method also includes treating a portion of the first gate spacer and a portion of the second gate spacer with a remote radical of hydrogen or oxygen, removing the treated portions, and after the removal, depositing a metal fill material over the source/drain feature.