Substrate processing method and substrate processing apparatus suppressing the influence of processing gas released from a substrate processed in a processing chamber on a transport chamber
The present invention provides a substrate processing method and a substrate processing apparatus that suppress the influence of processing gas released from a substrate processed in a processing chamber on a transport chamber. The substrate processing method includes: a step of performing a first p...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The present invention provides a substrate processing method and a substrate processing apparatus that suppress the influence of processing gas released from a substrate processed in a processing chamber on a transport chamber. The substrate processing method includes: a step of performing a first processing on the substrate in a first processing chamber; a step of performing a second processing on other substrate in a second processing chamber; and after performing the first processing, a step of placing the substrate on standby in the first processing chamber; a step of using the transport device to transport the substrate from the first processing chamber to the transport chamber after a first time has elapsed from the time when the second processing on the other substrate is completed; and a step of using the transport device to transport the substrate to the second processing chamber after the step of starting to transport the substrate to the transport chamber and exchanging the substrate with other sub |
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