Nonvolatile memory capable of suitably recording the temperature in writing

In accordance with one embodiment, a control circuit of a nonvolatile memory executes a first programming operation, and executes a second programming operation after the first programming operation. The first programming operation is provided to perform the operations of setting a threshold voltage of each of a plurality of second memory cells in a first section among a plurality of first sections that corresponds to written data, and setting a threshold voltage of each of a plurality of third memory cells in a second section among the plurality of first sections. The second programming operation is provided to perform operations of setting a threshold voltage of each of the plurality of second memory cells in a third section among a plurality of third sections that corresponds to written data, and setting a threshold voltage of each of the plurality of third memory cells in a fourth section of two fourth sections among the plurality of third sections that correspond to temperature information.