Storage device and method of manufacturing switching layer

Embodiments provide a storage device capable of maintaining characteristics of a memory cell and reducing a leak current, and a method of manufacturing a switching layer. A storage device includes a memory cell including a variable resistance element and a switching element having snapback current-v...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NAKAYAMA, MASAHIKO, KANAYA, HIROYUKI, FUKUDA, KENJI, NOMOTO, RINA, SUGIYAMA, HIDEYUKI
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!