Method of metallization by a nickel or cobalt alloy for the manufacture of semiconductor devices

A method of metallizing a semiconductor for the manufacture of three-dimensional semiconductor devices such as integrated circuits or storage memories. The metallization process includes a step of activating the surface of a mineral oxide substrate with a noble metal, such as palladium, followed by...

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Bibliographische Detailangaben
Hauptverfasser:	THIAM, MIKAILOU, BERTHON, HERMINE MARIE, LAKHDARI, AMINE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of metallizing a semiconductor for the manufacture of three-dimensional semiconductor devices such as integrated circuits or storage memories. The metallization process includes a step of activating the surface of a mineral oxide substrate with a noble metal, such as palladium, followed by a step of depositing a nickel or cobalt alloy containing boron and at least one of phosphorus and tungsten by electroless deposition.