Wafer and method of processing wafer
A wafer and a method of processing a wafer are provided. The method of processing the wafer includes the following steps. A wafer having a first surface and a second surface opposite the first surface is provided. A fixture pattern is pasted on the first surface to cover a first portion of the first...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TSAI, CHIAI HSU, WENING FAN, CHUN-I YU, WEN-HUAI LO, HUNGANG HUNG, SHIH |
| description | A wafer and a method of processing a wafer are provided. The method of processing the wafer includes the following steps. A wafer having a first surface and a second surface opposite the first surface is provided. A fixture pattern is pasted on the first surface to cover a first portion of the first surface of the wafer, while the fixture pattern exposes a second portion of the first surface. A first etching step is performed on the second portion of the first surface to form a first etching pattern on the first surface of the wafer. The fixture pattern is removed from the first surface, and grinding is performed on the second surface of the wafer. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202336827A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202336827A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202336827A3</originalsourceid><addsrcrecordid>eNrjZFAJT0xLLVJIzEtRyE0tychPUchPUygoyk9OLS7OzEtXKAdJ8zCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSS-JBwIwMjY2MzCyNzR2Ni1AAA8cwmsQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Wafer and method of processing wafer</title><source>esp@cenet</source><creator>TSAI, CHIAI ; HSU, WENING ; FAN, CHUN-I ; YU, WEN-HUAI ; LO, HUNGANG ; HUNG, SHIH</creator><creatorcontrib>TSAI, CHIAI ; HSU, WENING ; FAN, CHUN-I ; YU, WEN-HUAI ; LO, HUNGANG ; HUNG, SHIH</creatorcontrib><description>A wafer and a method of processing a wafer are provided. The method of processing the wafer includes the following steps. A wafer having a first surface and a second surface opposite the first surface is provided. A fixture pattern is pasted on the first surface to cover a first portion of the first surface of the wafer, while the fixture pattern exposes a second portion of the first surface. A first etching step is performed on the second portion of the first surface to form a first etching pattern on the first surface of the wafer. The fixture pattern is removed from the first surface, and grinding is performed on the second surface of the wafer.</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230916&DB=EPODOC&CC=TW&NR=202336827A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230916&DB=EPODOC&CC=TW&NR=202336827A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TSAI, CHIAI</creatorcontrib><creatorcontrib>HSU, WENING</creatorcontrib><creatorcontrib>FAN, CHUN-I</creatorcontrib><creatorcontrib>YU, WEN-HUAI</creatorcontrib><creatorcontrib>LO, HUNGANG</creatorcontrib><creatorcontrib>HUNG, SHIH</creatorcontrib><title>Wafer and method of processing wafer</title><description>A wafer and a method of processing a wafer are provided. The method of processing the wafer includes the following steps. A wafer having a first surface and a second surface opposite the first surface is provided. A fixture pattern is pasted on the first surface to cover a first portion of the first surface of the wafer, while the fixture pattern exposes a second portion of the first surface. A first etching step is performed on the second portion of the first surface to form a first etching pattern on the first surface of the wafer. The fixture pattern is removed from the first surface, and grinding is performed on the second surface of the wafer.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAJT0xLLVJIzEtRyE0tychPUchPUygoyk9OLS7OzEtXKAdJ8zCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSS-JBwIwMjY2MzCyNzR2Ni1AAA8cwmsQ</recordid><startdate>20230916</startdate><enddate>20230916</enddate><creator>TSAI, CHIAI</creator><creator>HSU, WENING</creator><creator>FAN, CHUN-I</creator><creator>YU, WEN-HUAI</creator><creator>LO, HUNGANG</creator><creator>HUNG, SHIH</creator><scope>EVB</scope></search><sort><creationdate>20230916</creationdate><title>Wafer and method of processing wafer</title><author>TSAI, CHIAI ; HSU, WENING ; FAN, CHUN-I ; YU, WEN-HUAI ; LO, HUNGANG ; HUNG, SHIH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202336827A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>TSAI, CHIAI</creatorcontrib><creatorcontrib>HSU, WENING</creatorcontrib><creatorcontrib>FAN, CHUN-I</creatorcontrib><creatorcontrib>YU, WEN-HUAI</creatorcontrib><creatorcontrib>LO, HUNGANG</creatorcontrib><creatorcontrib>HUNG, SHIH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TSAI, CHIAI</au><au>HSU, WENING</au><au>FAN, CHUN-I</au><au>YU, WEN-HUAI</au><au>LO, HUNGANG</au><au>HUNG, SHIH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Wafer and method of processing wafer</title><date>2023-09-16</date><risdate>2023</risdate><abstract>A wafer and a method of processing a wafer are provided. The method of processing the wafer includes the following steps. A wafer having a first surface and a second surface opposite the first surface is provided. A fixture pattern is pasted on the first surface to cover a first portion of the first surface of the wafer, while the fixture pattern exposes a second portion of the first surface. A first etching step is performed on the second portion of the first surface to form a first etching pattern on the first surface of the wafer. The fixture pattern is removed from the first surface, and grinding is performed on the second surface of the wafer.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_TW202336827A |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Wafer and method of processing wafer |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T22%3A24%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TSAI,%20CHIAI&rft.date=2023-09-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202336827A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |