Wafer and method of processing wafer

A wafer and a method of processing a wafer are provided. The method of processing the wafer includes the following steps. A wafer having a first surface and a second surface opposite the first surface is provided. A fixture pattern is pasted on the first surface to cover a first portion of the first...

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Bibliographische Detailangaben
Hauptverfasser:	TSAI, CHIAI, HSU, WENING, FAN, CHUN-I, YU, WEN-HUAI, LO, HUNGANG, HUNG, SHIH
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A wafer and a method of processing a wafer are provided. The method of processing the wafer includes the following steps. A wafer having a first surface and a second surface opposite the first surface is provided. A fixture pattern is pasted on the first surface to cover a first portion of the first surface of the wafer, while the fixture pattern exposes a second portion of the first surface. A first etching step is performed on the second portion of the first surface to form a first etching pattern on the first surface of the wafer. The fixture pattern is removed from the first surface, and grinding is performed on the second surface of the wafer.