Film-forming method

Provided is a film-forming method that enables formation of a film having a high density on a treatment target object to be treated, at a preferable film formation rate at a low temperature, and that is applicable to industrial production. The present invention is a film-forming method that is for f...

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Bibliographische Detailangaben
Hauptverfasser: KAWASAKI, FUMIO, HIROSE, YOSHIRO, NAKATANI, KIMIHIKO, OTSUKA, YASUNORI, NAGATA, KEISUKE, HASHIMOTO, YOSHITOMO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:Provided is a film-forming method that enables formation of a film having a high density on a treatment target object to be treated, at a preferable film formation rate at a low temperature, and that is applicable to industrial production. The present invention is a film-forming method that is for forming a film on a treatment target object, and is characterized by comprising: a raw material gas supply step for supplying a raw material gas to a treatment container in which the treatment target object is placed, so that the raw material gas is adsorbed onto the treatment target object, and thereafter, purging the treatment container using a first purge gas; and a reaction gas supply step for supplying a reaction gas to the treatment container after the raw material gas supply step, so that the raw material gas adsorbed onto the treatment target object is oxidized, and thereafter, purging the treatment container using a second purge gas. The method is characterized in that, for example, the raw material gas and