Photoresist stripping composition

The present invention addresses the problem of providing a photoresist stripping composition that exhibits a high stripping performance even with respect to a hardened resist, and that, even when the amount of water in the make-up is small, experiences little decrease in stripping performance when w...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	ITO, TSUBASA, SHIMIZU, TOSHIKAZU, SASAKI, RYOU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention addresses the problem of providing a photoresist stripping composition that exhibits a high stripping performance even with respect to a hardened resist, and that, even when the amount of water in the make-up is small, experiences little decrease in stripping performance when water evaporates and makes it possible to inhibit corrosion of a substrate-constituting metal that comes into contact with a liquid, such as Cu, Al, or Si. The above is accomplished by a photoresist stripping composition containing (A) a quaternary ammonium hydroxide, (B) a sugar alcohol, (C) an amine, (D) water, (E) DMSO, and (F) ethylene glycol, the (D) water content being 1.0-10 mass% relative to the total mass of the composition.