Resist composition, resist pattern formation method, compound and acid diffusion control agent

To provide a resist composition which enables formation of a resist pattern achieving high sensitivity and reduction in roughness. A resist composition contains a resin component (A1), and a photodegradable base (D0) which contains a carboxylic acid having a pka of 0.50 or more as a generation acid...

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Bibliographische Detailangaben
Hauptverfasser:	KATO, HIROKI, ODASHIMA, RIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE MATERIALS THEREFOR METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORIGINALS THEREFOR PAINTS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To provide a resist composition which enables formation of a resist pattern achieving high sensitivity and reduction in roughness. A resist composition contains a resin component (A1), and a photodegradable base (D0) which contains a carboxylic acid having a pka of 0.50 or more as a generation acid and is represented by general formula (d0). In the formula, Rm is a hydrogen atom or a hydroxy group; X0 is a bromine atom or an iodine atom; Yd0 is a divalent connection group or a single bond; Rb1 is a fluorine atom or a fluorinated alkyl group; p01 is an integer of 1 to 5; and Rb2 and Rb3 are hydrocarbon groups, provided that at least one Rb1 is bonded to an ortho position or a meta position of a benzene ring, and the number of total fluorine atoms contained in -F and/or -CFRx1Rx2 bonded to an aromatic ring bonded to a sulfur atom in the formula is 3 or more.